Electronic Devices — practice questions
59 curated practice questions from Electronic Devices (Physics JEE Advanced, NTA Exams) — 48 hard, 11 medium. Every question includes the final answer free; step-by-step worked solutions with a free account.
- The nature of binding for a crystal with alternate and evenly spaced positive and negative ions is
- Assertion : When PN– junction is forward biased then motion of charge carriers at junction is due to diffusion. In…
- Assertion : Zener diode works on a principle of breakdown voltage. Reason :Current increases suddenly after breakdown…
- Assertion : The color of light emitted by a LED depends on its forward biasing. Reason : The reverse biasing of p-n…
- The combination of the gates shown in the figure below produces
- In a p-n junction diode, not connected to any circuit,
- In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
- The plate resistance of a triode is 3 × 10 3 ohm and its mutual conductance is 1.5 × 10 –3 amp/volt. The amplification…
- Assertion : If the temperature of a semiconductor is increased then it’s resistance decreases. Reason : The energy gap…
- A Ge specimen is doped with Al. The concentration of acceptor atoms is ~10 21 atoms/m 3 . Given that the intrinsic…
- The resistance of a germanium junction diode whose V– I is shown in figure is (V k = 0.3V)
- In the circuit given below, the value of the current is +4 k
- Assertion : The number of electrons in a P -type silicon semiconductor is less than the number of electrons in a pure…
- A full wave rectifier circuit along with the output is shown in figure. The contribution(s) from the diode 1 is (are)
- In the circuit, if the forward voltage drop for the diode is 0.5 V , the current will be
- If the following input signal is sent through a PN -junction diode, then the output signal across R L will be
- An NPN -transistor circuit is arranged as shown in figure. It is
- Sum of the two binary numbers (100010) 2 and (11011) 2 is
- In the circuit given below, V(t) is the sinusoidal voltage source, voltage drop V AB (t) across the resistance R is
- In semiconductor the concentrations of electrons and holes are 8 × 10 18 /m 3 and 5 × 10 18 /m 3 respectively. If the…
- In the following common emitter configuration an NPN transistor with current gain β = 100 is used. The output voltage…
- Current in the circuit will be
- To obtain P –type Si semiconductor, we need to dope pure Si with
- A truth table is given below. Which of the following has this type of truth table A 0 1 0 1 B 0 0 1 1 y 1 0 0 0
- The impurity atoms, with which pure silicon should be doped to make a p -type semiconductor, are those of
- When the temperature of silicon sample is increased from 27°C to 100°C, the conductivity of silicon will be
- If α = 0.98 and current through emitter i e = 20 mA , the value of β is
- The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon p-n junctions are
- A silicon specimen is made into a P- type semi-conductor by doping, on an average, one Indium atom per 5 × 10 7 silicon…
- In forward bias, the width of potential barrier in a P-N junction diode
- For the transistor circuit shown below, if β = 100, voltage drop between emitter and base is 0.7 V then value of V CE…
- When a potential difference is applied across, the current passing through
- The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature
- For a given plate voltage, the plate current in a triode value is maximum when the potential of
- The circuit shown in the figure contains two diodes each with a forward resistance of 50 ohm and with infinite backward…
- For a transistor, in a common emitter arrangement, the alternating current gain β is given by
- The probability of electrons to be found in the conduction band of an intrinsic semiconductor at a finite temperature
- Assetion : The electrical conductivity of n-type semiconductor is higher than that of p-type semiconductor at a given…
- Let n p and n e be the number of holes and conduction electrons respectively in a semiconductor. Then
- Assertion : In the following circuit the potential drop across the resistance is zero. Reason :The given resistance has…
- This symbol represents
- When Ge crystals are doped with phosphorus atom, then it becomes
- Find V AB
- In NPN transistor the collector current is 10 mA . If 90% of electrons emitted reach the collector, then
- A common emitter amplifier is designed with NPN transistor (α = 0.99). The input impedance is 1 K Ω and load is 10 K Ω…
- Figure gives a system of logic gates. From the study of truth table it can be found that to produce a high output (1)…
- Carbon, silicon and Germanium atoms have four valence electrons each. Their valence and conduction band are separated…
- For a transistor the parameter β = 99. The value of the parameter α is
- Consider an NPN transistor amplifier in common-emitter configuration. The current gain of the transistor is 100. If the…
- The given truth table is of array |c|c| A & X 0 & 1 1 & 0 array
- Two identical p-n junctions may be connected in series with a battery in three ways, as shown in figure. The potential…
- The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480…
- Which logic gate is represented by the following combination of logic gates
- The truth-table given below is for which gate A 0 0 1 1 B 0 1 0 1 C 1 1 1 0
- A gate has the following truth table P 1 1 0 0 Q 1 0 1 0 R 1 0 0 0 The gate is
- In an NPN transistor circuit, the collector current is 10 mA. If 90% of the electrons emitted reach the collector, the…
- For a common base configuration of PNP transistor I_ c I_ e =0.96 then maximum current gain in common emitter…
- The transfer ratio of a transistor is 50. The input resistance of the transistor when used in the common-emitter…
- Which impurity is doped in Si to form N-type semi-conductor?