Assertion : When PN– junction is forward biased then motion of charge carriers at…
Physics · JEE Advanced · NTA Exams — Electronic Devices
Assertion : When PN–junction is forward biased then motion of charge carriers at junction is due to diffusion. In reverse biasing the cause of motion of charge is drifting.
Reason : In the following circuit emitter is reverse biased and collector is forward biased.
Reason : In the following circuit emitter is reverse biased and collector is forward biased.
- Assertion and Reason are true and the Reason is the correct explanation of the Assertion.
- Assertion and Reason are true but the Reason is not a correct explanation of the Assertion.
- Assertion is true but the Reason is false.
- Assertion is false but the Reason is true.
Answer
(B) Assertion and Reason are true but the Reason is not a correct explanation of the Assertion.
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- Assetion : The electrical conductivity of n-type semiconductor is higher than that of p-type semiconductor at…
- In the circuit, if the forward voltage drop for the diode is 0.5 V , the current will be
- A Ge specimen is doped with Al. The concentration of acceptor atoms is ~10 21 atoms/m 3 . Given that the…
- Current in the circuit will be
- In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
- The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter…
- For a transistor, in a common emitter arrangement, the alternating current gain β is given by
- A silicon specimen is made into a P- type semi-conductor by doping, on an average, one Indium atom per 5 × 10…
More Electronic Devices questions · Browse all practice questions