In forward bias, forward current obtained from the p-n junction diode is :
Physics · JEE Main · NTA Exams — Electronic Devices
In forward bias, forward current obtained from the p-n junction diode is :
- due to injection of electrons in p-side
- due to injection of holes in n-side
- both (a and b)
- due to flow of electrons from negative terminal of supply to its positive terminal
Answer
(C) both (a and b)
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- In a p-type semiconductor, the majority and minority charge carriers are respectively,
- Two ideal p-n junction diodes are connected in an electrical circuit with resistances to a battery of 12V as…
- When a transistor is biased as follows: Then, it is said to be in :
- The depletion layer in the p-n junction region is caused by:
- In the given circuit, the output Y becomes zero for the inputs :
- Due to diffusion of electrons from n to p-side, I. electron-hole combination across p-n junction occurs. II…
- An n-p-n transistor circuit is arranged as shown in figure. It is :
- In the given circuit, if the forward voltage drop for the diode is 0.5 V, the current is
More Electronic Devices questions · Browse all practice questions