Due to diffusion of electrons from n to p-side, I. electron-hole combination across p-n…
Physics · JEE Main · NTA Exams — Electronic Devices
Due to diffusion of electrons from n to p-side,
I. electron-hole combination across p-n junction occurs.
II. an ionised acceptor is left in the p-region.
III. an ionised donor is left in the n-region.
IV. electrons of n-side comes to p-side and electron-hole combination takes place in p-side
Correct options are :
I. electron-hole combination across p-n junction occurs.
II. an ionised acceptor is left in the p-region.
III. an ionised donor is left in the n-region.
IV. electrons of n-side comes to p-side and electron-hole combination takes place in p-side
Correct options are :
- I and II
- II and III
- II and IV
- II, III and IV
Answer
(D) II, III and IV
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- In an n-p-n transistor circuit, the collector current is 9 mA. If 90% of the electrons emitted reach the…
- When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The…
- In the given circuit, if the forward voltage drop for the diode is 0.5 V, the current is
- By increasing the temperature, the specific resistance of a conductor and a semiconductor
- For the given circuit of p-n junction diode, which of the following statement is correct ?
- The correct relationship between the two current gains α and β in a transistor is :
- When germanium is doped with phosphorus, the doped material has :
- The probability of electrons to be found in the conduction band of an intrinsic semicondutor at a finite…
More Electronic Devices questions · Browse all practice questions