If n e is number density of electrons in conduction band and n h is number density of…
Physics · JEE Main · NTA Exams — Electronic Devices
If ne is number density of electrons in conduction band and nh is number density of holes in valence band, then for an extrinsic semiconductor at room temperature, (ni = number density of intrinsic pairs)
- \(\frac{\mathrm{n}_{\mathrm{e}}}{\mathrm{n}_{\mathrm{h}}}=\mathrm{n}_{\mathrm{i}}^{2}\)
- \(\frac{\mathrm{n}_{\mathrm{h}}}{\mathrm{n}_{\mathrm{e}}}=\mathrm{n}_{\mathrm{i}}^{2}\)
- \(\mathrm{n}_{\mathrm{e}} \mathrm{n}_{\mathrm{h}}=\mathrm{n}_{\mathrm{i}}^{2}\)
- \(\mathrm{n}_{\mathrm{e}}+\mathrm{n}_{\mathrm{h}}=\mathrm{n}_{\mathrm{i}}^{2}\)
Answer
(C) n _ e n _ h = n _ i ^ 2
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- A sinusoidal voltage of peak value 200 V is connected to a diode and resistor R in the cirucuit shown so that…
- For a transistor, in a common-emitter arrangement, the AC current gain β is given by :
- The following circuit represents :
- The depletion layer in the p-n junction region is caused by:
- The following configuration of gate is equivalent to :
- A n-p-n transistor power amplifier in CE configuration gives
- A silicon specimen is made into a p-type semiconductor by doping, on an average, one Indium atom per 5×10 7…
- The probability of electrons to be found in the conduction band of an intrinsic semicondutor at a finite…
More Electronic Devices questions · Browse all practice questions