A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can…
Physics · JEE Main · NTA Exams — Electronic Devices
A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength:
- 4000 nm
- 6000 nm
- 4000 Å
- 6000 Å
Answer
(C) 4000 Å
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