Which of these are correct ? I. In forward biasing, holes from p-side crosses junction…
Physics · JEE Main · NTA Exams — Electronic Devices
Which of these are correct ?
I. In forward biasing, holes from p-side crosses junction and reach n-side.
II. In forward biasing, electrons from n-side crosses junction and reach p-side.
III. In n-side, holes are minority charge carriers.
IV. In p-side, electrons are minority charge carriers.
I. In forward biasing, holes from p-side crosses junction and reach n-side.
II. In forward biasing, electrons from n-side crosses junction and reach p-side.
III. In n-side, holes are minority charge carriers.
IV. In p-side, electrons are minority charge carriers.
- I, II and III
- I, III and IV
- II, III and IV
- I, II, III and IV
Answer
(D) I, II, III and IV
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- A transistor is used in common-emitter mode as an amplifer. Then :
- The forbidden energy gap in the energy bands of germanium at room temperature is about :
- A n-p-n transistor power amplifier in CE configuration gives
- An n-type and p-type silicon can be obtained by doping pure silicon with :
- A zener diode is connected to a battery and a load as shown below: The currents I, I Z and I L are…
- In an n-p-n circuit transistor, the collector current is 10 mA. If 80% electrons emitted reach the collector…
- Due to diffusion of electrons from n to p-side, I. electron-hole combination across p-n junction occurs. II…
- In an n-p-n transistor circuit, the collector current is 9 mA. If 90% of the electrons emitted reach the…
More Electronic Devices questions · Browse all practice questions