Silicon carbide, is produced by heating SiO 2 and C to high temperatures according to the…
Chemistry · JEE Main · NTA Exams — Some Basic Concepts in Chemistry
Silicon carbide, is produced by heating SiO2 and C to high temperatures according to the equation :
SiO2 (s) + 3C (s) → SiC (s) + 2CO (g)
How many grams of SiC could be formed by reacting 2.00 g of SiO2 and 2.0 g of C ?
SiO2 (s) + 3C (s) → SiC (s) + 2CO (g)
How many grams of SiC could be formed by reacting 2.00 g of SiO2 and 2.0 g of C ?
- 1.33
- 2.56
- 3.59
- 4.0
Answer
(A) 1.33
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