Three photo diodes D 1 , D 2 and D 3 are made of semiconductors having band gap of 2.5…
Physics · Class 12 · CBSE — Semiconductor Electronics
Three photo diodes D1, D2 and D3 are made of semiconductors having band gap of 2.5 eV, 2 eV and 3 eV, respectively. Which one will be able to detect light of wavelength 6000 Å ?
- D1
- D2
- D3
- D1 and D2 both
Answer
(B) D 2
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- Assertion (A): A photocell is called an electric eye. Reason (R): When light is incident on some…
- In case of a p-n junction diode at high value of reverse bias, the current rises sharply. The value of…
- Junction Diode as a Rectifier: The process of conversion of an ac voltage into a dc voltage is called…
- In the given Fig., V o is the potential barrier across a p-n junction, when no battery is connected across…
- In the case of forward biasing of p-n junction, which one of the following figures correctly depicts the…
- In the energy band diagram of a material as given below, the open circles and filled circles denote holes and…
- An n-type semiconducting Si is obtained by doping intrinsic Si with:
- When the resistance measured between p and n ends of a p-n junction diode is high, it can act as a/an-
More Semiconductor Electronics questions · Browse all practice questions