For the forward biasing of a p-n junction diode, which of the following statements is not…
Physics · Class 12 · CBSE — Semiconductor Electronics
For the forward biasing of a p-n junction diode, which of the following statements is not correct?
- The potential barrier decreases.
- Minority carrier injection occurs.
- Width of depletion layer increases.
- Forward current is due to the diffusion of both holes and electrons.
Answer
(C) Width of depletion layer increases.
Sign up free on Edukali to view the step-by-step worked solution and practice thousands of similar questions.
Related practice questions
- In the following figure, the diodes which are forward biased, are
- Si is doped with a pentavalent element. The energy required to set the additional electron free is about:
- The threshold voltage for a p-n junction diode used in the circuit is 0.7 V. The type of biasing and current…
- In the circuit shown in figure if the current through the 500 W resistor is 25 mA and that through the load R…
- The circuit shown in the figure contains two diodes each with a forward resistance of 30 Ω and with infinite…
- Assertion (A): Silicon is preferred over germanium for making semiconductor devices. Reason (R): The energy…
- Find the wavelength of light that may excite an electron in the valence band of diamond to the conduction…
- Assertion (A): A hole is an apparent free particle with effective positive electronic charge. Reason (R): A…
More Semiconductor Electronics questions · Browse all practice questions