The dominant mechanisms for motion of charge carriers in forward, reverse biased silicon…
Physics · NEET · NTA Exams — Electronic Devices
The dominant mechanisms for motion of charge carriers in forward, reverse biased silicon p-n junction are
- drift in forward bias, diffusion in reverse bias
- diffusion in forward bias, drift in reverse bias
- diffusion in both forward and reverse bias
- drift in both forward and reverse bias
Answer
(B) diffusion in forward bias, drift in reverse bias
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